NSB8JTHE3_A/P
Vishay Semiconductor Diodes Division
Deutsch
Artikelnummer: | NSB8JTHE3_A/P |
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Hersteller / Marke: | Vishay General Semiconductor – Diodes Division |
Teil der Beschreibung.: | DIODE GEN PURP 600V 8A TO263AB |
Datenblätte: |
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RoHs Status: | Lead free / RoHs compliant |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
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1000+ | $0.63 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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Spannung - Forward (Vf) (Max) @ If | 1.1V @ 8A |
Spannung - Sperr (Vr) (max) | 600V |
Supplier Device-Gehäuse | TO-263AB |
Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
Serie | Automotive, AEC-Q101 |
Verpackung | Tube |
Verpackung / Gehäuse | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produkteigenschaften | Eigenschaften |
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Betriebstemperatur - Anschluss | -55°C ~ 150°C |
Befestigungsart | Surface Mount |
Diodentyp | Standard |
Strom - Sperrleckstrom @ Vr | 10µA @ 600V |
Strom - Richt (Io) | 8A |
Kapazität @ Vr, F | 55pF @ 4V, 1MHz |
NSB8JTHE3_A/P Einzelheiten PDF [English] | NSB8JTHE3_A/P PDF - EN.pdf |
DIODE GEN PURP 800V 8A TO263AB
DIODE GEN PURP 600V 8A TO263AB
DIODE GEN PURP 600V 8A TO263AB
DIODE GEN PURP 600V 8A TO263AB
DIODE GEN PURP 600V 8A TO263AB
DIODE GEN PURP 600V 8A TO263AB
DIODE GEN PURP 600V 8A TO263AB
DIODE GEN PURP 800V 8A TO263AB
DIODE GEN PURP 600V 8A TO263AB
DIODE GEN PURP 800V 8A TO263AB
DIODE GEN PURP 800V 8A TO263AB
DIODE GEN PURP 600V 8A TO263AB
DIODE GEN PURP 800V 8A TO263AB
DIODE GEN PURP 600V 8A TO263AB
DIODE GEN PURP 800V 8A TO263AB
DIODE GEN PURP 600V 8A TO263AB
DIODE GEN PURP 800V 8A TO263AB
DIODE GEN PURP 600V 8A TO263AB
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![]() NSB8JTHE3_A/PVishay Semiconductor Diodes Division |
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